At last year’s 2020 Virtual Flash Summit, NEO Semiconductors CEO Andy Hsu demonstrated a novel NAND technology that will bring us better speed and higher destiny. The technology was called X-NAND, and it was just a demonstration at the time.However, today the company finally got its design Obtained approvals and patents.
X-NAND technology is a new NAND memory development method designed by NEO Semiconductor. NEO Semiconductor is a Silicon Valley company headquartered in San Jose, founded in 2012. So far, the company has obtained more than 20 memory-related patents, and more are in development.
X-NAND technology aims to have the speed of single-level cell (SLC) NAND and provide the capacity of quad-level cell (QLC) NAND flash memory, while trying to achieve the smallest possible form factor.We detailed the technology in our Report here.
X-NAND is basically a combination of two worlds. The technology uses the bits of SLC and QLC to combine them into a high-endurance, high-speed, and high-capacity NAND solution. You can find NEO’s performance evaluation chart below, highlighting the potential of its equipment.For a deeper understanding of all aspects, including density and durability, please refer to the available 16-page white paper here.
We are in an era that requires large-capacity and high-speed storage, and X-NAND seems to be the perfect choice for expanding storage capacity and performance. Among them, applications such as 5G and AI/ML have improved the most.
Neo does not produce chips based on X-NAND technology, but just provides a blueprint for memory manufacturers to produce their own solutions. NEO Semiconductor hopes to license its X-NAND IP to some large memory manufacturers such as Samsung, SK Hynix and Micron, where they will buy the IP and embed it in their products. This will lead to better adoption of X-NAND by the market because memory manufacturers have the production capacity and funds to bring new technologies to the market.